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| 1 | Oxidation Resistance Coatings of Ir-Zr and Ir by Double Glow Plasma显示文摘Oxidation resistance coatings of Ire40 at.% Zr and Ir were produced onto Mo substrates by double glow plasma technology. The oxidation resistances of the coatings were evaluated at high temperature. Ire Zr coating consisted of two layers: the primary layer close to the substrate was composed of dense columnar grains and the second layer was composed of dense grains of nanometric size. The mass gain of Ir coating above 800 C was about 1.35% due to the formation of solid IrO2. The mass loss of Ir coating was about 5.3% due to the formation of gaseous oxide IrO3when being held at 1227 C for 30 min. The substrate was protected more effectively by multilayer than monolayer coating of Ir in oxidizing environment. The Ire Zr coating was well bonded to the substrate after oxidation at 800 C. After oxidation at 1000 C, the Ire Zr coating was poorly bonded to the substrate. The oxidation resistance of Ire Zr coating was poor due to high content of Zr. | Zhaofeng Chen Wangping Wu Xiangna Cong | 2014 | Journal of Materials Science & Technology2014，30，3： | 4 |
| 2 | Visible-light stimulated synaptic plasticity in amorphous indium−gallium−zinc oxide enabled by monocrystalline double perovskite for high-performance neuromorphic applications显示文摘Photoelectric synaptic devices have been considered as one of the key components in artificial neuromorphic systems due to their excellent capability to emulate the functions of visual neurons,such as light perception and image processing.Herein,we demonstrate an optically-stimulated artificial synapse with a clear photoresponse from ultraviolet to visible light,which is established on a novel heterostructure consisting of monocrystalline Cs2AgBiBr6 perovskite and indium–gallium–zinc oxide(IGZO)thin film.As compared with pure IGZO,the heterostructure significantly enhances the photoresponse and corresponding synaptic plasticity of the devices,which originate from the superior visible absorption of single-crystal Cs2AgBiBr6 and effective interfacial charge transfer from Cs2AgBiBr6 to IGZO.A variety of synaptic behaviors are realized on the fabricated thin-film transistors,including excitatory postsynaptic current,paired pulse facilitation,short-term,and long-term plasticity.Furthermore,an artificial neural network is simulated based on the photonic potentiation and electrical depression effects of synaptic devices,and an accuracy rate up to 83.8%±1.2%for pattern recognition is achieved.This finding promises a simple and efficient way to construct photoelectric synaptic devices with tunable spectrum for future neuromorphic applications. | Fu Huang Feier Fang Yue Zheng Qi You Henan Li Shaofan Fang Xiangna Cong Ke Jiang Ye Wang Cheng Han Wei Chen Yumeng Shi | 2023 | Nano Research2023，16，1： | 2 |
| 3 | Structure transition from aragonite to vaterite and calcite by the assistance of SDBS 显示文摘 | Nan Zhaodong Chen Xiangna Yang Qianqian | 2008 | Journal of Colloid and Interface Science2008，325，2： | 1 |
| 4 | Platinum and Iridium Coatings Obtained by Double Glow Plasma Technology显示文摘Pt and Ir coatings were produced by double glow plasma technology on the surface of Ti alloy substrates. The chemical compositions of the coatings were determined by X-ray diffraction and X-ray photoelectron spectroscopy. The microstructure and morphology of the coatings were observed by scanning electron microscopy. The hardness and elastic modulus of the coatings were estimated by nanoindentation. The measurements of adhesive forces of the coatings were performed with scratch tester. The results indicated that the Pt and Ir coatings displayed the preferred (220) orientation due to the initial nuclei with preferred growth on the surface of the substrates. The interface between the Pt coating and substrate exhibited no evidence of delamination. The Ir coating was composed of irregular columnar grains with many nanovoids at the interface between the coating and substrate. The mean values of hardness for Pt and Ir coatings were 0.9 GPa and 9 GPa, respectively. The elastic modulus of Pt and Ir coatings were 178 GPa and 339 GPa, respectively. The adhesive forces of the Pt and Ir coatings were about 66.4 N and 55 N, respectively. The Pt and Ir coatings adhered well to the Ti alloy substrates. | WU Wangping CHEN Zhaofeng CHEN Zhou CONG Xiangna QIU Jinlian | 2012 | 贵金属2012，33，A01： | 1 |
| 5 | Study on iridium coating produced by double glowplasma显示文摘 | Chert Zhaofeng Wu Wangping Cong Xiangna | 2011 | Advanced Materials Research2011，，314316： | 1 |
| 6 | A novel Ir-Zr gradient coating prepared on Mo substrate by double glow plasma显示文摘 | Cong Xiangna Chen Zhaofeng Wu Wangping | 2012 | Appl Surf Sci2012，258，12： | 1 |
| 7 | Co-deposition of Ir-containing Zr coating by double glow plasma 显示文摘 | Cong Xiangna Chen Zhaofeng Wu Wangping | 2012 | Acta Astronautica2012，，79： | 1 |
| 8 | Structure transition from aragonite to vaterite and calcite by the assistance of SDBS显示文摘 | Zhaodong Nan Xiangna Chen Qianqian Yang Xiuzhen Wang Zuoyi Shi Wanguo Hou | 2008 | Journal of Colloid And Interface Science2008，，2： | 1 |
| 9 | A novel Ir–Zr gradient coating prepared on Mo substrate by double glow plasma显示文摘 | Xiangna Cong Zhaofeng Chen Wangping Wu Jiang Xu Fred Edmond Boafo | 2012 | Applied Surface Science2012，，12： | 1 |
| 10 | Photoabsorption Spectra of Nano-Crystalline Silicon Films显示文摘The photoabsorption spectra,of nanoycrystalline silicon(nc-Si:H)films were measured by means of constant photoconductivity method.We investigated the changes of absorption spectra,with the increasing of crystallinity as the deposited films are amorphous,micro crystallin e and nan o-crystallin e.We found that in nc-Si:H the transition processes in the interfacial region between the grains predominate the whole range of the absorption spectra.We related the phenomenon to the structural changes in the material. | LIU Xiangna HE Yuliang F.Wang R.Schwarz | 1993 | Chinese Physics Letters1993，10，12： | 0 |
| 11 | Cubic Silicon Carbite Film Growth and Characterization by Hot Filament Chemical Vapor Deposition显示文摘Cubic silicon carbide films(β-Sic)have been successfully grown on monocrystalline silicon wafers by hot filament chemical vapor deposition(HFCVD)at temperatures ranging from 500 to 650℃,fulfilled by a two step process.Raman spectrum of the HFCVD-grownβ-SiC films shows a characteristic peak at 975 cm^(-1)with a full width at half maximum(FWHM)of 76cm^(-1).At room temperature,the films emit visible photoluminescence at 580nm with an FWHM of 0.4eV.X-ray diffraction and x-ray photoelectron spectroscopy investigations reveal that the epitaxial films are of good quality. | SHI Hongtao ZHANG Rong ZHENG Youdou HE Yuliang LIU Xiangna | 1994 | Chinese Physics Letters1994，11，11： | 0 |
| 12 | INVESTIGATION OF NITROGEN CONTENT INFLUENCE ON ELECTRON SPIN RESONANCE IN a-Si:H/a-SiN_(x):H MULATLATYERS显示文摘Influence of nitrogen content on electron spin resonance(ESR)in a-Si:H/a-SiN_(x):H multilayers is studied,associated with infrared absorption analysis.The spin density decreases rapidly in the region x>~0.7 and approaches a saturated value,which is much less than common assumption.The results are explained in terms of the structure relaxation due to the increase of N-H bonds with increasing x and the transfer doping across interfaces. | LIU Xiangna ZHAO Zhouyin WANG Yong | 1990 | Chinese Physics Letters1990，7，2： | 0 |
| 13 | EFFECT OF NITROGEN CONTENT IN a-Si:H/a-SiN_(x):H MULTILAYERS ON CONDUCTIVE MECHANISM显示文摘We studied the effect of nitrogen content in a-SiN_(x):H barrier layers to a-Si:H/a-SiN_(x):H mutilayers with different thickness of a-Si:H well layers.It was shown that,except quantum well effect,the ratio of N/Si and interfacial defects of multilayers have influence on the conduction mechanism.The activation energy of mobility ΔE is equal to 0.17±0.03eV which is attributed to the interfacial scattering. | HE Yuliang YU Bin LIU Xiangna | 1990 | Chinese Physics Letters1990，7，11： | 0 |
| 14 | Lactobacillus plantarum AR113 attenuates liver injury in D-galactose-induced aging mice via the inhibition of oxidative stress and endoplasmic reticulum stress显示文摘Probiotics could effectively eliminate excess reactive oxygen species(ROS)generated during aging or lipid metabolism disorders,but their mechanism is unclear.The major purpose of this study was to investigate the mechanism of Lactiplantibacillus plantarun AR113 alleviating oxidative stress injury in the D-galactose induced aging mice.The result showed that pretreatment with L.plantarun AR113 significantly relieving H_(2)O_(2)induced cytotoxicity in HepG2 cells by maintain cell membrane integrity and increasing antioxidant enzyme activities.In D-galactose induced aging mice,L.plantarun AR113 could significantly attenuate liver damage and inflammatory infiltration by promoting endogenous glutathione(GSH)synthesis and activating the Nrf2/Keap1 signaling pathway in mice,and increasing the expression of regulated phaseⅡdetoxification enzymes and antioxidant enzymes.Further analysis shown that gavage of L.plantarun AR113 could significantly reduce the expression of G protein-coupled receptor 78(GPR78)and C/EBP homologous protein(CHOP)proteins,and promote the restoration of endoplasmic reticulum(ER)homeostasis,thereby activating cell anti-apoptotic pathways.These results were also confirmed in H_(2)O_(2)-treated HepG2 experiments.It indicated that L.plantarun AR113 could inhibit D-galactose-induced liver injury through dual inhibition of ER stress and oxidative stress.L.plantarun AR113 have good application potential in anti-aging and alleviating metabolic disorders. | Yongjun Xia Yujie Gong Xiangna Lin Yijin Yang Xin Song Guangqiang Wang Zhiqiang Xiong Yangyang Qian Zhuan Liao Hui Zhang Lianzhong Ai | 2024 | Food Science and Human Wellness2024，13，2： | 0 |
| 15 | 高产酒精肺炎克雷伯菌引起的非酒精性脂肪肝病显示文摘文章简介非酒精性脂肪肝(NAFLD)具有进展为肝硬化和肝细胞癌的风险,其潜在病因多种多样,目前认为NAFLD与肠道微生物群的变化有关,然而,它们之间的因果关系尚不清楚。研究团队发现肠道菌群中高产酒精的肺炎克雷伯菌(HiAlc Kpn)可能是NAFLD的一个病因。在NAFLD患者人群中,高达60%的患者肠道菌群中含有HiAlc Kpn。 | 袁静 Chen Chen Jinghua Cui Jing Lu Chao Yan Xiao Wei Xiangna Zhao NanNan Li Shaoli Li Guanhua Xue Weiwei Cheng Boxing Li Huan Li Weishi Lin Changyu Tian Jiangtao Zhao Juqiang Han Daizhi An Qiong Zhang Hong Wei Minghua Zheng Xuejun Ma Wei Li Xiao Chen Zheng Zhang Hui Zeng Sun Ying JianXin Wu Ruifu Yang 刘翟 | 2020 | 科学新闻2020，，2： | 0 |
| 16 | Efficiently band-tailored type-Ⅲ van der Waals heterostructure for tunnel diodes and optoelectronic devices显示文摘Broken-gap(type-Ⅲ)two-dimensional(2D)van der Waals heterostructures(vdWHs)offer an ideal platform for interband tunneling devices due to their broken-gap band offset and sharp band edge.Here,we demonstrate an efficient control of energy band alignment in a typical type-ⅢvdWH,which is composed of vertically-stacked molybdenum telluride(MoTe2)and tin diselenide(SnSe2),via both electrostatic and optical modulation.By a single electrostatic gating with hexagonal boron nitride(hBN)as the dielectric,a variety of electrical transport characteristics including forward rectifying,Zener tunneling,and backward rectifying are realized on the same heterojunction at low gate voltages of±1 V.In particular,the heterostructure can function as an Esaki tunnel diode with a room-temperature negative differential resistance.This great tunability originates from the atomicallyflat and inert surface of h-BN that significantly suppresses the interfacial trap scattering and strain effects.Upon the illumination of an 885 nm laser,the band alignment of heterojunction can be further tuned to facilitate the direct tunneling of photogenerated charge carriers,which leads to a high photocurrent on/off ratio of>105 and a competitive photodetectivity of 1.03×1012 Jones at zero bias.Moreover,the open-circuit voltage of irradiated heterojunction can be switched from positive to negative at opposite gate voltages,revealing a transition from accumulation mode to depletion mode.Our findings not only promise a simple strategy to tailor the bands of type-ⅢvdWHs but also provide an in-depth understanding of interlayer tunneling for future low-power electronic and optoelectronic applications. | Xiangna Cong Yue Zheng Fu Huang Qi You Jian Tang Feier Fang Ke Jiang Cheng Han Yumeng Shi | 2022 | Nano Research2022，15，9： | 0 |
| 17 | Robust integral sliding mode control for uncertain systems with multiple time delays显示文摘This paper proposes a robust integral sliding mode (RISM) manifold and the corresponding stabilization control law for uncertain systems with multiple time-varying time delays based on the techniques of linear matrix inequalities (LMI). The sufficient condition for the existence of the RISM manifold is given in terms of LMI, and then, the sliding mode control (SMC) law that can keep the system state on the RISM manifold from the initial time moment is developed. The efficiency and feasibility of the results are illustrated by a numerical example. | Xiaoyu ZHANG, Xiangna LI (Department of Electronic and Information Engineering, North China Institute of Science and Technology, Beijing 101601, China) | 2010 | 控制理论与应用(英文版)2010，8，2： | 0 |
| 18 | Interfacial Properties of a-Si:H/a-SiN_(x):H Multilayers Studied by electroabsorption Spectroscopy显示文摘By using electroabsorption method,we find that the built-in field(~10^(5) V·cm^(-1))in the a-Si sublayers of a-Si:H/a-SiN_(x):H multilayers points towards the sample surfaces.We ascribe the internal field to the asymmetric distribution of defect states which exist primarily in the silicon side of the silicon-on-nitride interfaces,owing to the large repellent lattice stress there.We also find that the built-in potential depends strongly on x,with a maximum value near x=1.0.We intend to explain it as a result of structural softening as more N atoms are introduced into Si networks in the range of x>1.0. | LIU Xiangna ZHAO zhouying WANG Yong LI Wenkai | 1991 | Chinese Physics Letters1991，8，7： | 0 |
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