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| 1 | Grain boundary engineering with nano-scale InSb producing high performance In_(x)Ce_(y)Co_(4)Sb_(12+z)skutterudite thermoelectrics显示文摘Thermoelectric semiconductors based on CoSb_(3)hold the best promise for recovering industrial or automotive waste heat because of their high efficiency and relatively abundant,lead-free constituent elements.However,higher efficiency is needed before thermoelectrics reach economic viability for widespread use.In this study,n-type In_(x)Ce_(y)Co_(4)Sb_(12+z)skutterudites with high thermoelectric performance are produced by combining several phonon scattering mechanisms in a panoscopic synthesis.Using melt spinning followed by spark plasma sintering(MS-SPS),bulk In_(x)Ce_(y)Co_(4)Sb_(12+z)alloys are formed with grain boundaries decorated with nano-phase of InSb.The skutterudite matrix has grains on a scale of 100-200 nm and the InSb nano-phase with a typical size of 5e15 nm is evenly dispersed at the grain boundaries of the skutterudite matrix.Coupled with the presence of defects on the Sb sublattice,this multi-scale nanometer structure is exceptionally effective in scattering phonons and,therefore,InxCey-Co_(4)Sb_(12)/InSb nano-composites have very low lattice thermal conductivity and high zT values reaching in excess of 1.5 at 800 K. | Han Li Xianli Su Xinfeng Tang Qingjie Zhang Ctirad Uher G.Jeffrey Snyder Umut Aydemir | 2017 | Journal of Materiomics2017，3，4： | 7 |
| 2 | Realization of non-equilibrium process for high thermoelectric performance Sb-doped Ge Te显示文摘Pristine GeTe shows inferior thermoelectric performance around unit due to the large carrier concentration induced by the presence of intrinsic high concentration of Ge vacancy. In this study, we report a thermoelectric figure of merit ZT of 1.56 at 700 K, realized in Sb-doped GeTe based thermoelectric(TE)materials via combined effect of suppression of intrinsic Ge vacancy and Sb doping. The nonequilibrium nature during melt spinning process plays very important role. For one thing, it promotes the homogeneity in Ge_(1-x)Sb_xTe samples and refines the grain size of the product. Moreover the persistent Ge precipitated as impurity phase in the traditional synthesis process is found to be dissolved back into the GeTe sublattice, accompanying with a drastic suppression of Ge vacancies concentration which in combination with Sb electron doping significantly reduced the inherent carrier concentration in GeTe.Low carrier concentration, approaching the optimum carrier concentration ~3.74 × 10^(-20) cm^(-3) and a high power factor of 4.01 × 10^(-3) W m^(-1)K^(-2) at 750 K are achieved for Ge_(0.98)Sb_(0.02) Te sample. In addition,the enhanced grain boundary phonon scattering by refining the grain size through melt spinning(MS)process, coupled with the intensified alloying phonon scattering via Sb doping leads to low thermal conductivity of 1.53 W m^(-1) K^(-1) at 700 K for Ge_(0.94) Sb_(0.06) Te sample. All those contribute to a high ZT value,representing over 50% improvement in the ZT value compared to the Sb free samples, which provides an alternative way for ultrafast synthesis of high performance GeTe based thermoelectric material. | Evariste Nshimyimana Xianli Su Hongyao Xie Wei Liu Rigui Deng Tingting Luo Yonggao Yan Xinfeng Tang | 2018 | Science Bulletin2018，63，11： | 6 |
| 3 | Eco-friendly high-performance silicide thermoelectric materials显示文摘Silicide-based thermoelectrics are examples of cost-efficient and environmentally friendly new energy materials, which can be used for power-generation applications in the range of 500–800 K. We review the research focusing on the exploration of n-type Mg_2IV-based solid solutions(IV = Si, Ge and Sn) and summarize the most prominent discoveries achieved so far in their studies. Owing to their superior performance compared to other silicides, including p-type Mg_2IV, higher manganese silicides(HMS) are commonly considered as a suitable p-type material to be used in thermoelectric modules in conjunction with n-type Mg_2IV-based solid solutions for mid-temperature power-generation applications. We describe the strategies used to improve the thermal and electronic transport properties of n-type Mg_2IV-based solid solutions and mention some key features of HMS. We also point out the importance of mechanical properties and thermal stability of this family of materials and offer perspectives on the future research work to further improve their performance. | Wei Liu Kang Yin Qingjie Zhang Ctirad Uher Xinfeng Tang | 2017 | National Science Review2017，4，4： | 5 |
| 4 | A low-cost green approach for synthesis of lead oxide from waste lead ash for use in new lead-acid batteries显示文摘This paper proposes a novel method relating to the recycling of waste lead ash originated from procedure of lead alloy production.The spent lead ash was first disposed by acetic acid leaching system,where lead ash structure wrapping impurities would be destroyed.The synthesis of lead oxide products was conducted at a lower temperature of 90℃.The effect of molar ratio of CH3 COOH to lead content of the ash on leaching efficiency was studied through the acetic acid leaching system.The results demonstrate that 84.6%of lead could be obtained in the leaching solution,while merely 0.7%of Fe blend in solution within a leaching time of 120 min.In the stage of lead oxide synthesis from leaching solution,the yield of lead oxide products could reach up to 94.4%when the molar ratio of NaOH to lead in filtrate was 2.5.This novel green method could shed light on the reuse of lead from exhausted ash with a much more convenient and environmentally friendly procedure. | Wei Zhang Gang Tang Xiaoqin Xiang Renyu Wang Shuangquan Gao Xinfeng Zhu Qiting Zuo | 2019 | Chinese Journal of Chemical Engineering2019，27，7： | 2 |
| 5 | A comprehensive review on Bi_(2)Te_(3)-based thin films: Thermoelectrics and beyond显示文摘Bi_(2)Te_(3)-based materials are not only the most important and widely used room temperature thermoelectric(TE)materials but are also canonical examples of topological insulators in which the topological surface states are protected by the time-reversal symmetry.High-performance thin films based on Bi_(2)Te_(3)- have attracted worldwide attention during the past two decades due primarily to their outstanding TE performance as highly efficient TE coolers and as miniature and flexible TE power generators for a variety of electronic devices.Moreover,intriguing topological phenomena,such as the quantum anomalous Hall effect and topological superconductivity discovered in Bi_(2)Te_(3)-based thin films and heterostructures,have shaped research directions in the field of condensed matter physics.In Bi_(2)Te_(3)-based films and heterostructures,delicate control of the carrier transport,film composition,and microstructure are prerequisites for successful device operations as well as for experimental verification of exotic topological phenomena.This review summarizes the recent progress made in atomic defect engineering,carrier tuning,and band engineering down to a nanoscale regime and how it relates to the growth and fabrication of high-quality Bi_(2)Te_(3)-based films.The review also briefly discusses the physical insight into the exciting field of topological phenomena that were so dramatically realized in Bi_(2)Te_(3)-and Bi_(2)Se_(3)‐based structures.It is expected that Bi_(2)Te_(3)-based thin films and heterostructures will play an ever more prominent role as flexible TE devices collecting and converting low-level(body)heat into electricity for numerous electronic applications.It is also likely that such films will continue to be a remarkable platform for the realization of novel topological phenomena. | Xinfeng Tang Ziwei Li Wei Liu ingjie Zhang Ctirad Uher | 2022 | Interdisciplinary Materials2022，1，1： | 1 |
| 6 | High figure of merit and thermoelectric properties of Bi-doped Mg 2 Si 0.4 Sn 0.6 solid solutions显示文摘 | Wei Liu Qiang Zhang Kang Yin Hang Chi Xiaoyuan Zhou Xinfeng Tang Ctirad Uher | 2013 | Journal of Solid State Chemistry2013，，： | 1 |
| 7 | 显示文摘 | Tang Xinfeng Xie Wenjie Li Han | 2007 | Applied Physics Letters2007，90，01： | 1 |
| 8 | High temperature thermoelectric'trans- port properties of double-atom-filled clathrate compounds Yb, Ba8-xGal6 Ge30 显示文摘 | Tang Xinfeng | 2008 | J Appl Phys2008，104，01： | 1 |
| 9 | Design of a Concentration Solar Thermoelectric Generator显示文摘 | Peng Li Lanlan Cai Pengcheng Zhai Xinfeng Tang Qingjie Zhang M. Niino | 2010 | Journal of Electronic Materials2010，，9： | 1 |
| 10 | Preparation and Thermoelectric Transport Properties of High-performance p-typen Bi3Te3 with Layered Nanostructure显示文摘 | Tang Xinfeng Xie Wenjie | 2007 | Applied Physics Letters2007，90，01： | 1 |
| 11 | Preparation and Thermoelectric Transport Properties of High-performance p-type Bi2Te3 with Layered Nanostructure显示文摘 | Tang Xinfeng Xie Wenjie Zhang Qingjie | 2007 | Applied Physics Letters2007，，90： | 1 |
| 12 | Synthesis and thermoelectric properties of hydrochloric acid-doped polyaniline显示文摘 | Li Junjie Tang Xinfeng Li Han | | 0，，11： | 1 |
| 13 | Preparation and Thermoelectric Transport Properties of High-performance p-type BizTe3 with Layered Nanostructure显示文摘 | Tang Xinfeng Xie Wenjie Li Han | 2007 | Applied Physics Letters2007，90，01： | 1 |
| 14 | 2 Co4Sb12+y Bulk Materials with Nanostructure显示文摘 | Li Han Tang Xinfeng Su Xiardi Preparation and Thermoelectric Properties of High-performance Sb Additional Yb0 | 2008 | Applied Physics Letters2008，92，20： | 1 |
| 15 | The fabrication of large-area upgraded metallurgical grade multi-crystalline silicon solar cells in a production line 显示文摘 | Tang Xinfeng Wu Ying Yao Yan | 2013 | Energy and Enviromennt Materials2013，743，： | 1 |
| 16 | 显示文摘 | Li Han Tang Xinfeng Su Xianli | 2009 | Appl Phys Lett2009，92，20： | 1 |
| 17 | 显示文摘 | Li Han Tang Xinfeng Zhang Qingjie | 2009 | Appl Phys Lett2009，93，25： | 1 |
| 18 | Metallic few-layered 1T-VS_(2)nanosheets for enhanced sodium storage显示文摘Metallic few-layered 1T phase vanadium disulfide nanosheets have been employed for boosting sodium ion batteries.It can deliver a capacity of 241 mAh∙g^(−1)at 100 mA∙g^(−1)after 200 cycles.Such long-term stability is attributed to the facile ion diffusion and electron transport resulting from the well-designed two-dimensional(2D)electron-electron correlations among V atoms in the 1T phase and optimized in-planar electric transport.Our results highlight the phase engineering into electrode design for energy storage. | Liang Wu Peng Wang Xingwu Zhai Hang Wang Wenqi Zhan Xinfeng Tang Qianwen Li Min Zhou | 2023 | Journal of Semiconductors2023，44，11： | 0 |
| 19 | Transformation of Undesired Li_(2)CO_(3)into Lithiophilic Layer Via Double Replacement Reaction for Garnet Electrolyte Engineering显示文摘Garnet-type solid-state electrolytes(SSEs)are a remarkable Li-ion electrolyte for the realization of next-generation all-solid-state lithium batteries due to their excellent stability against Li metal as well as high ionic conductivities at room temperature.However,garnet electrolytes always contain undesired and hardly removable Li_(2)CO_(3) contaminations that have persistently large resistance and unstable interface contact with Li metal.This is a critical bottleneck for the practical application of garnet electrolytes.Here,we design a novel strategy to completely root out Li_(2)CO_(3) both inside and on the surface of garnet.This is achieved by a so-called double replacement reaction between Li_(2)CO_(3) and SiO_(2) during one-step hot press process for garnet electrolyte densification.It leads to in-situ transformation of LixSiOy(LSO)mostly locating around the grain boundaries of garnet.Due to the higher ion conductivity and better electrochemistry stability of LSO than Li_(2)CO_(3),the modified garnet electrolyte shows much improved electrochemical performance.Moreover,the wettability between modified garnet electrolyte and lithium metals was significantly enhanced in the absence of surface Li_(2)CO_(3).As a proof of concept,an assembled Li symmetric cell with modified garnet electrolyte displays a high critical current density(CCD)of 0.7 mA cm^(-2)and a low interfacial impedance(5Ωcm^(2))at 25℃.These results indicate that the upcycling of Li_(2)CO_(3)is a promising strategy to well-address the degradation and interfacial issue associated with garnet electrolytes. | Jiaxu Zhang Ruohan Yu Jun Li Huiyu Zhai Gangjian Tan Xinfeng Tang | 2022 | Energy & Environmental Materials2022，5，3： | 0 |
| 20 | Band convergence boosted high thermoelectric performance of Zintl compound Mg_(3)Sb_(2) achieved by biaxial strains显示文摘Mg_(3)Sb_(2) as a Zintl compound is a promising thermoelectric material with the intrinsically low lattice thermal conductivity and excellent n-type electrical properties,but its p-type electrical transport properties are poor.Here,the thermoelectric performance of Mg_(3)Sb_(2) under the effect of biaxial strain is investigated by using first-principles method and Boltzmann transport theory.The application of biaxial strain enables tuning the band structure of Mg_(3)Sb_(2) in such a way that the band degeneracy of both the conduction band and valence band increases.As the biaxial strain increases,the Seebeck coefficient of ptype Mg_(3)Sb_(2) has a remarkable increase,leading to a significant improvement in power factor.This is mainly ascribed to the achievement of valence band orbital degeneracy.Meanwhile,the lattice thermal conductivity exhibits very slight biaxial strain dependence within the strain range considered in this work,which increases from 1.28 to 1.62 W m^(-1) K^(-1) at 300 K.Finally,the highest ZT of p-type Mg_(3)Sb_(2) at 700 K can be up to 2.6 along the in-plane direction under-2.5%biaxial strain,which is almost three times that of the unstrained counterpart.The realization of high thermoelectric performance of p-type Mg_(3)Sb_(2) will promote its practical applications as thermoelectric generators. | Suiting Ning Shan Huang Ziye Zhang Ning Qi Man Jiang Zhiquan Chen Xinfeng Tang | 2022 | Journal of Materiomics2022，8，5： | 0 |
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