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11篇 您的检索式：作者名="Zengsun"

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		题名	作者	年代	出处	被引量
	1	Direct Deposition of Polycrystalline Diamond Films on the Si(100) Mirror Surface by Hot Filament Chemical Vapor Deposition显示文摘High quality diamond films have been deposited on Si(100) mirror surface without using any surface pretreatment such as abrasive diamond scratching,diamond-like carbon predeposition or oil treatment.The experiments are carried out in the hot filament chemical vapour deposition system by using the mixture of methane,hydrogen and oxygen.The films show the well-defined facets and are confirmed by Raman spectroscopy and scanning electron microscopy to be high quality diamond films.In this deposition process,higher substrate temperature,high filament temperature and oxygen addition play the important roles in diamond nucleation on the mirror-smooth Si(100) surface.	GAO Chunxiao ZOU Guangtian JIN Zengsun	1994	Chinese Physics Letters1994，11，5：	1
	2	The deposition of diamond film with high thermal conductivity 显示文摘	CHANGZHI GU ZENGSUN JIN XIANYI LIOU	1997	Thin Solid Films1997，311，：	1
	3	Preparation of High Quality Boron Doped p-type Semiconducting Diamond Films and Investigation of Doping Behavior显示文摘	Yu San Zou Guangtian Jin Zengsun	1993	Chinese Journal of Semiconductors1993，，14：	1
	4	High rate growth of thick diamond films by high-current hot-cathode PCVD显示文摘	Zengsun Jin Xiangyi Lu	2005	Journal of Crystal Growth2005，280，：	1
	5	Field emission enhancement of amorphous carbon films by nitrogen-implantation 显示文摘	Junjie Li Weitao Zheng Changzhi Gu Zengsun Jin Yongnian Zhao Xianxiu Mei Zongxi Mu Cbuang Dong Changqing Sun	2004	Carbon2004，42，：	1
	6	Influence of substratc DC bias on chemical bonding, adhesion and roughness of carbon nitride films 显示文摘	LI Junjie ZHENG W T JIN Zengsun	2002	Appl Surf Sci2002，191，：	1
	7	The deposition of diamond film with high thermal conductivity显示文摘	Changzhi Gu Zengsun Jin Xianyi Lu Guangtian Zou Jifa Zhang Rongchuan Fang	1997	Thin Solid Films1997，，：	1
	8	Diamond Nuclei on the Silicon Mirror Surface by Direct-Current Glow Discharge Chemical Vapor Deposition显示文摘A new method is proposed for generation of high density diamond nuclei in the dc glow discharge chemical vapor deposition.Application of dc negative valtage together with high methane content has been found to generate diamond nuclei as high as 10^(10)/cm^(2) on mirror-polished Si wafer.It has been indicated that carbon over-saturation,negative voltage and hydrogen play an important role in this new pretreatment process.	GAO Chunxiao ZOU Guangtian JIN Zengsun	1994	Chinese Physics Letters1994，11，3：	0
	9	Study of Diamond Nucleation on Porous Silicon显示文摘Diamond films have been deposited on porous silicon with microwave plasma chemical vapour deposition method.Nucleation density and site have been observed and analyzed by using scanning electron micrography.Experimental results showed that the nucleation density changes with the porosity and the nucleation occurs mostly on the edge of the pores.Reasons of these phenomena are discussed.	BAI Yizhen WANG Chunlei JIN Zengsun LÜ Xianyi ZOU Guangtian	1995	Chinese Physics Letters1995，12，7：	0
	10	Heteroepitaxial Growth of Diamond Film on Cubic Boron Nitride Substrate by Hot-Filament Chemical Vapour Deposition显示文摘Diamond films have been grown on high pressure synthesized cubic boron nitride(c-BN)particles by hot-filament chemical vapor deposition method,and heteroepitaxial diamond films on the c-BN(100)facets with no-evident defects were obtained,but polycrystalline diamond films were formed only on the c-BN(111)facets.	JIN Zengsun LU Xianyi ZOU Guangtian	1995	Chinese Physics Letters1995，12，2：	0
	11	Preparation of High Quality p-Type Diamond Thin Films by Thermal Chemical Vapor Deposition显示文摘P-type semiconducting polycrystalline diamond thin films doped with boron were synthesized on single crystalline silicon substrate by thermal chemical vapor deposition from a tungsten filament and placing boron-contained substance(boron nitride or elemental boron)on sample holder.The films were determined to be the high quality diamond by Raman spectroscopy,X-ray diffraction and scanning electron microscope measurements.The doping properties of boron were measured by Hall method and infrared absorption.	YU San JIN Zengsun LÜ Xianyi ZOU Guangtian	1991	Chinese Physics Letters1991，8，4：	0

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