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| 1 | Study on Catalytic Alkylation of Benzene with Methanol over ZSM-22 and ZSM-35显示文摘The ZSM-22 and ZSM-35 zeolites were synthesized via the hydrothermal crystallization method. The samples were characterized by XRD, SEM, N_2 adsorption-desorption, NH_3-TPD, TPO, TG, and Raman spectrometry, and the results showed that ZSM-22 and ZSM-35 possessed similar microporous volume and acidity. In the alkylation of benzene with methanol, ZSM-22 and ZSM-35 showed different coke location, coking rate and graphitizing degree. Compared with the industrial ZSM-5, ZSM-22 and ZSM-35 both showed higher selectivity of toluene and xylene(93.63% and 96.50%,respectively) during the alkylation of benzene with methanol, and the selectivity of para-xylene in xylene isomers was51.96% and 41.45%, respectively. Meanwhile, the selectivity of ethylbenzene and C_9^+ aromatics was also lower than that of industrial ZSM-5. | Li Yunsheng Wen Zhenhao Wei Zhenhao Yang Fan Zhu Xuedong | 2017 | China Petroleum Processing & Petrochemical Technology2017，19，4： | 5 |
| 2 | An ultra-robust fingerprinting method for quality assessment of traditional Chinese medicine using multiple reaction monitoring mass spectrometry显示文摘Chromatographic fingerprinting has been perceived as an essential tool for assessing quality and chemical equivalence of traditional Chinese medicine.However,this pattern-oriented approach still has some weak points in terms of chemical coverage and robustness.In this work,we proposed a multiple reaction monitoring(MRM)-based fingerprinting method in which approximately 100 constituents were simultaneously detected for quality assessment.The derivative MRM approach was employed to rapidly design MRM transitions independent of chemical standards,based on which the large-scale fingerprinting method was efficiently established.This approach was exemplified on QiShenYiQi Pill(QSYQ),a traditional Chinese medicine-derived drug product,and its robustness was systematically evaluated by four indices:clustering analysis by principal component analysis,similarity analysis by the congruence coefficient,the number of separated peaks,and the peak area proportion of separated peaks.Compared with conventional ultraviolet-based fingerprints,the MRM fingerprints provided not only better discriminatory capacity for the tested normal/abnormal QSYQ samples,but also higher robustness under different chromatographic conditions(i.e.,flow rate,apparent pH,column temperature,and column).The result also showed for such large-scale fingerprints including a large number of peaks,the angle cosine measure after min-max normalization was more suitable for setting a decision criterion than the unnormalized algorithm.This proof-of-concept application gives evidence that combining MRM technique with proper similarity analysis metrices can provide a highly sensitive,robust and comprehensive analytical approach for quality assessment of traditional Chinese medicine. | Zhenhao Li Xiaohui Zhang Jie Liao Xiaohui Fan Yiyu Cheng | 2021 | Journal of Pharmaceutical Analysis2021，11，1： | 4 |
| 3 | Optimization study on the reconstruction and expansion of an underground rail transit center in Shanghai soft ground显示文摘 | Shaoming Liao Yaoyao Fan Zhenhao Shi Wei Shao Xiangpeng Kong | 2013 | Tunnelling and Underground Space Technology incorporating Trenchless Technology Research2013，，： | 1 |
| 4 | Field theoretical approach to spin models显示文摘We developed a systematic non-perturbative method base on Dyson–Schwinger theory and theΦ-derivable theory for Ising model at broken phase.Based on these methods,we obtain critical temperature and spin spin correlation beyond mean field theory.The spectrum of Green function obtained from our methods become gapless at critical point,so the susceptibility become divergent at Tc.The critical temperature of Ising model obtained from this method is fairly good in comparison with other non-cluster methods.It is straightforward to extend this method to more complicate spin models for example with continue symmetry. | Feng Liu Zhenhao Fan Zhipeng Sun Xuzong Chen Dingping Li | 2021 | Frontiers of physics2021，16，6： | 0 |
| 5 | Spin relaxation induced by interfacial effects in GaN/Al_(0.25) Ga_(0.75) N heterostructures显示文摘Spin relaxation induced by the interfacial effects in GaN/Al_(0.25) Ga_(0.75) N heterostructures was carefully investigated using a photon-energy-dependent time-resolved Kerr rotation spectrum.The existence of the interfacial localized states with potential fluctuations at the GaN/AlGaN heterointerface leads to photoluminescence peaks showing blue and S-shaped shifts owing to the excitation power and temperature,respectively.Photoexcited electrons in the localized states show a spin relaxation time longer than 1 ns because of the suppression of the D’yakonov-Perel’(DP)scattering,while the spin relaxation time of free electrons was approximately only 10 ps because of the giant Rashba spin-orbit coupling induced by the interfacial polarization field under the framework of the DP scattering mechanism.Furthermore,it is found that the high electron mobility at the heterointerface results in a long spin diffusion length of 300 nm at high temperatures,which is promising for the development of GaN-based spintronic devices. | Shixiong Zhang Ning Tang Xiaoyue Zhang Xingchen Liu Lei Fu Yunfan Zhang Teng Fan Zhenhao Sun Fentao Wang Weikun Ge Bo Shen | 2021 | Fundamental Research2021，1，6： | 0 |
| 6 | Spin injection into heavily-doped n-GaN via Schottky barrier显示文摘Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures.A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts.The spin injection efficiency of 21%was achieved at 1.7 K.It was confirmed that the thin Schottky barrier formed between the heavily ndoped GaN and Co was conducive to the direct spin tunneling,by reducing the spin scattering relaxation through the interface states. | Zhenhao Sun Ning Tang Shuaiyu Chen Fan Zhang Haoran Fan Shixiong Zhang Rongxin Wang Xi Lin Jianping Liu Weikun Ge Bo Shen | 2023 | Journal of Semiconductors2023，44，8： | 0 |
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