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| 1 | Vapor growth of WSe2/WS2 heterostructures with stacking dependent optical properties显示文摘Two-dimensional(2D)vertically stacked heterostructures based on layered transition-metal dichalcogenides(MDCs)have remarkablepote ntial in future applications due to their rich in terlayer related properties,such as in terlayer excitons,tun able interlayer band alignments.However,the controlled growth of TMDC bilayer heterostructures with preferred stacking structure remains challenging.Here,we report atwo-step van der Waals epitaxial vapor growth of WSe2/WS2 vertically stacked bilayer heterostructures with controllable commensurate crystallographic alignments(so called AA and AB stacki ng),by controlling the deposition temperature.Moire patter ns were obtai ned in bothAA and AB stacked WSe2/WS2 heterostructures.The stacking configuration of the vertical heterostructures was verified by the secondharmonic generation signals.Photoluminescenee and Raman spectroscopy studies further confirm that the heterostructures with differentstacking configuration have obviously different optical properties,which is ascribed to the distinct in terlayer coupling and resonance excitation between the distinguishing AA and AB stacked heterostructures.The controlled growth of AA and AB stacked heterostructures could provide an importa nee platform not only for fun dame ntal researches but also for functional electronic and optoelectronic deviceapplications. | Xueping Wu Xiao Wang Honglai Li Zhouxiaosong Zeng Biyuan Zheng Danliang Zhang Fang Li Xiaoli Zhu Ying Jiang Anlian Pan | 2019 | Nano Research2019，12，12： | 3 |
| 2 | Optical Image Encryption Based on Mixed Chaotic Maps and Single-Shot Digital Holography显示文摘Random phase masks play a key role in optical image encryption schemes based on double random phase technique. In this paper, a mixed chaotic method is proposed, which can efficiently solve some weaknesses that one-dimensional(1-D) single chaotic maps encounter to generate random phase masks. Based on the chaotic random phase masks, optical image encryption and decryption are realized with a single-shot digital holographic technique. In the proposed encryption scheme, the initial value and parameters of mixed chaotic maps serve as secret keys,which is convenient for the key management and transmission. Moreover, it also possesses high resistance against statistical attack, brute-force attack, noise attack and shear attack. Simulation results and security analysis verify the validity and security of the proposed encryption scheme. | Yonggang Su Chen Tang Xia Chen Biyuan Li Wenjun Xu Zhenkun Lei | 2017 | Transactions of Tianjin University2017，23，2： | 3 |
| 3 | Dual-channel type tunable field-effect transistors based on vertical bilayer WS2(1−x)Se2x/SnS2 heterostructures显示文摘Layered semiconductor heterostructures are essential elements in modern electronic and optoelectronic devices.Dynamically engineering the composition of these heterostructures may enable the flexible design of the properties of heterostructure-based electronics and optoelectronics as well as their optimization.Here,we report for the first time a two-step chemical vapor deposition approach for a series of WS2(1−x)Se2x/SnS2 vertical heterostructures with high-quality and large areas.The steady-state photoluminescence results exhibit an obvious composition-related quenching ratio,revealing a strong coherence between the band offset and the charge transfer efficiency at the junction interface.Based on the achieved heterostructures,dual-channel backgate field-effect transistors were successfully designed and exhibited typical composition-dependent transport behaviors,and pure n-type unipolar transistors to ambipolar transistors were realized in such systems.The direct vapor growth of these novel vertical WS2(1−x)Se2x/SnS2 heterostructures could offer an interesting system for probing new physical properties and provide a series of layered heterostructures for high-quality devices. | Biyuan Zheng Dong Li Chenguang Zhu Jianyue Lan Xingxia Sun Weihao Zheng Huawei Liu Xuehong Zhang Xiaoli Zhu Yexin Feng Tao Xu Litao Sun Gengzhao Xu Xiao Wang Chao Ma Anlian Pan | 2020 | InfoMat2020，2，4： | 3 |
| 4 | Comparative analysis of alternative splicing, alternative polyadenylation and the expression of the two KIN genes from cytoplasmic male sterility cabbage ( Brassica oleracea L. var. capitata L.)显示文摘 | Peng Tao Xiaoyun Huang Biyuan Li Wuhong Wang Zhichen Yue Juanli Lei Xinmin Zhong | 2014 | Molecular Genetics and Genomics2014，，3： | 1 |
| 5 | Genome-wide identification and characterization of aquaporin genes ( AQP s) in Chinese cabbage ( Brassica rapa ssp. pekinensis )显示文摘 | Peng Tao Xinmin Zhong Biyuan Li Wuhong Wang Zhichen Yue Juanli Lei Weiling Guo Xiaoyun Huang | 2014 | Molecular Genetics and Genomics2014，，6： | 1 |
| 6 | Optical synaptic devices with ultra-low power consumption for neuromorphic computing显示文摘Brain-inspired neuromorphic computing,featured by parallel computing,is considered as one of the most energyefficient and time-saving architectures for massive data computing.However,photonic synapse,one of the key components,is still suffering high power consumption,potentially limiting its applications in artificial neural system.In this study,we present a BP/CdS heterostructure-based artificial photonic synapse with ultra-low power consumption.The device shows remarkable negative light response with maximum responsivity up to 4.1×10^(8)AW^(−1) at VD=0.5 V and light power intensity of 0.16μW cm^(−2)(1.78×10^(8)AW^(−1) on average),which further enables artificial synaptic applications with average power consumption as low as 4.78 fJ for each training process,representing the lowest among the reported results.Finally,a fully-connected optoelectronic neural network(FONN)is simulated with maximum image recognition accuracy up to 94.1%.This study provides new concept towards the designing of energy-efficient artificial photonic synapse and shows great potential in high-performance neuromorphic vision systems. | Chenguang Zhu Huawei Liu Wenqiang Wang Li Xiang Jie Jiang Qin Shuai Xin Yang Tian Zhang Biyuan Zheng Hui Wang Dong Li Anlian Pan | 2022 | Light(Science & Applications)2022，11，12： | 1 |
| 7 | Evaluation on the potentialcapacity of the swan oxbow for the conservation of the major Chinesecarps 显示文摘 | LI Sifa LU Guoqing ZHOU Biyuan | 1995 | Aquaculture1995，137，1： | 1 |
| 8 | Vapor growth of V‑doped MoS_(2)monolayers with enhanced B‑exciton emission and broad spectral response显示文摘Dynamically engineering the optical and electrical properties in two-dimensional(2D)materials is of great signifcance for designing the related functions and applications.The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials;however,this approach still remains to be explored in 2D materials.Here,we systematically demonstrate the growth of vanadium-doped molybdenum disulfde(V-doped MoS_(2))monolayers via an alkali metal-assisted chemical vapor deposition method.Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS_(2)monolayers.This was also confrmed by Raman and X-ray photoelectron spectroscopy.Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS_(2)monolayers(with low doping concentration).Most importantly,through temperature-dependent study,we observed efcient valley scattering of the B-exciton,greatly enhancing its emission intensity.Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS_(2),where a clear n-type behavior transited frst to ambipolar and then to lightly p-type charge carrier transport.In addition,visible to infrared wide-band photodetectors based on V-doped MoS_(2)monolayers(with low doping concentration)were demonstrated.The V-doped MoS_(2)monolayers with distinct B-exciton emission,enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and ofer novel materials for optoelectronic applications. | Biyuan Zheng Xingxia Sun Weihao Zheng Chenguang Zhu Chao Ma Anlian Pan Dong Li Shengman Li | 2023 | Frontiers of Optoelectronics2023，16，4： | 0 |
| 9 | Controlled growth of vertically stacked In_(2)Se_(3)/WSe_(2) heterostructures for ultrahigh responsivity photodetector显示文摘Transition metal dichalcogenides(TMDCs)are promising candidates for future optoelectronic devices accounting for their high carrier mobility and excellent quantum efficiency.However,the limited light absorption efficiency in atomically thin layers significantly hinders photocarrier generation,thereby impairing the optoelectronic performance and hindering practical applications.Herein,we successfully synthesized In_(2)Se_(3)/WSe_(2) heterostructures through a typical two-step chemical vapor deposition(CVD)method.The In_(2)Se_(3) nanosheet with strong light absorption capability,serving as the light absorption layer,was integrated with the monolayer WSe_(2),enhancing the photosensitivity of WSe_(2) significantly.Upon laser irradiation with a wavelength of 520 nm,the In_(2)Se_(3)/WSe_(2) heterostructure device shows an ultrahigh photoresponsivity with a value as high as 2333.5 A/W and a remarkable detectivity reaching up to 6.7×10^(12) Jones,which is the highest among almost the reported TMDCs-based heterostructures grown via CVD even some fabricated by mechanical exfoliation(ME).Combing the advantages of CVD method such as large scale,high yield,and clean interface,the In_(2)Se_(3)/WSe_(2) heterostructures would provide a novel path for future high-performance optoelectronic device. | Cheng Zhang Biyuan Zheng Guangcheng Wu Xueying Liu Jiaxin Wu Chengdong Yao Yizhe Wang Zilan Tang Ying Chen Lizhen Fang Luying Huang Dong Li Shengman Li Anlian Pan | 2024 | Nano Research2024，17，3： | 0 |
| 10 | Epitaxial van der Waals contacts for low schottky barrier MoS_(2) field effect transistors显示文摘Small contact resistance and low Schottky barrier height(SBH)are the keys to energy-efficient electronics and optoelectronics.Two-dimensional(2D)semiconductors-based field effect transistors(FETs),holding great promise for next-generation information circuits,still suffer from poor contact quality at the metal–semiconductor junction interface,which severely hinders their further applications.Here,a novel contact strategy is proposed,where Bi_(2)Te_(3)nanosheets with high conductivity were in-situ epitaxially grown on MoS_(2)as van der Waals contacts,which can effectively avoid the damage to MoS_(2)caused during the device manufacturing process,leading to a high-performance MoS_(2)FET.Moreover,the small work function difference between Bi_(2)Te_(3)and MoS_(2)(Bi_(2)Te_(3):4.31 eV,MoS_(2):4.37 eV,measured by Kelvin probe force microscopy(KPFM)),enables small band bending and Ohmic contact at the junction interface.Electrical characterizations indicate that the MoS_(2)FET device with Bi_(2)Te_(3)contacts possesses a high current on/off ratio(5×107),large effective carrier mobility(90 cm^(2)/(V·s)),and low flat-band SBH(60 meV),which is favorable as compared with MoS_(2)FET with traditional Cr/Au electrodes contacts,and superior to the vast majority of the reported chemical vapor deposition(CVD)MoS_(2)-based FET device.The demonstration of epitaxial van der Waals Bi_(2)Te_(3)contacts will facilitate the application of 2D MoS_(2)nanosheet in next-generation low-power consumption electronics and optoelectronics. | Huawei Liu Lizhen Fang Xiaoli Zhu Chenguang Zhu Xingxia Sun Gengzhao Xu Biyuan Zheng Ying Liu Ziyu Luo Hui Wang Chengdong Yao Dong Li Anlian Pan | 2023 | Nano Research2023，16，9： | 0 |
| 11 | Van der Waals epitaxial growth and optoelectronics of a vertical MoS_(2)/WSe_(2)p-n junction显示文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs)have attracted extensive attention due to their unique electronic and optical properties.In particular,TMDs can be fexibly combined to form diverse vertical van der Waals(vdWs)heterostructures without the limitation of lattice matching,which creates vast opportunities for fundamental investigation of novel optoelectronic applications.Here,we report an atomically thin vertical p-n junction WSe_(2)/MoS_(2)produced by a chemical vapor deposition method.Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties.Back gate feld efect transistor(FET)constructed using this p-n junction exhibits bipolar behaviors and a mobility of 9 cm^(2)/(V·s).In addition,the photodetector based on MoS_(2)/WSe_(2)heterostructures displays outstanding optoelectronic properties(R=8 A/W,D^(*)=2.93×10^(11)Jones,on/of ratio of 10^(4)),which benefted from the built-in electric feld across the interface.The direct growth of TMDs p-n vertical heterostructures may ofer a novel platform for future optoelectronic applications. | Yu Xiao Junyu Qu Ziyu Luo Ying Chen Xin Yang Danliang Zhang Honglai Li Biyuan Zheng Jiali Yi Rong Wu Wenxia You Bo Liu Shula Chen Anlian Pan | 2022 | Frontiers of Optoelectronics2022，15，4： | 0 |
| 12 | State space representation and phase analysis of gradient descent optimizers显示文摘Deep learning has achieved good results in the field of image recognition due to the key role of the optimizer in a deep learning network.In this work,the optimizers of dynamical system models are established,and the influence of parameter adjustments on the dynamic performance of the system is proposed.This is a useful supplement to the theoretical control models of optimizers.First,the system control model is derived based on the iterative formula of the optimizer,the optimizer model is expressed by differential equations,and the control equation of the optimizer is established.Second,based on the system control model of the optimizer,the phase trajectory process of the optimizer model and the influence of different hyperparameters on the system performance of the learning model are analyzed.Finally,controllers with different optimizers and different hyperparameters are used to classify the MNIST and CIFAR-10 datasets to verify the effects of different optimizers on the model learning performance and compare them with related methods.Experimental results show that selecting appropriate optimizers can accelerate the convergence speed of the model and improve the accuracy of model recognition.Furthermore,the convergence speed and performance of the stochastic gradient descent(SGD)optimizer are better than those of the stochastic gradient descent-momentum(SGD-M)and Nesterov accelerated gradient(NAG)optimizers. | Biyuan YAO Guiqing LI Wei WU | 2023 | Science China(Information Sciences)2023，66，4： | 0 |
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