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		题名	作者	年代	出处	被引量
	1	Heteroepitaxial growth of thick α-Ga_2O_3 film on sapphire(0001)by MIST-CVD technique显示文摘The 8 μm thick single-crystalline α-Ga2O3 epilayers have been heteroepitaxially grown on sapphire(0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show that the full-widths-at-halfmaximum(FWHM) of rocking curves for the(0006) and(10-14) planes are 0.024° and 0.24°, and the corresponding densities of screw and edge dislocations are 2.24 × 106 and 1.63 × 109 cm-2, respectively, indicative of high single crystallinity. The out-ofplane and in-plane epitaxial relationships are [0001] α-Ga2O3//[0001] α-Al2O3 and [11-20] α-Ga2O3//[11-20] α-Al2O3, respectively.The lateral domain size is in micron scale and the indirect bandgap is determined as 5.03 eV by transmittance spectra. Raman measurement indicates that the lattice-mismatch induced compressive residual strain cannot be ruled out despite the large thickness of the α-Ga2O3 epilayer. The achieved high quality α-Ga2O3 may provide an alternative material platform for developing high performance power devices and solar-blind photodetectors.	Tongchuan Ma Xuanhu Chen Fangfang Ren Shunming Zhu Shulin Gu Rong Zhang Youdou Zheng Jiandong Ye	2019	Journal of Semiconductors2019，40，1：	2
	2	Association of Interleukin 6 gene polymorphisms with genetic susceptibilities to spastic tetraplegia in males: A case-control study显示文摘	Mingjie Chen Tongchuan Li Sheyu Lin Dan Bi Dengna Zhu Qing Shang Caiyun Ma Honglian Wang Lei Wang Yiting Zhang Lin He Changlian Zhu Qinghe Xing	2013	Cytokine2013，，：	1

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