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| 1 | Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band显示文摘A high-performance and broadband heterojunction photodetector has been successfully fabricated.The heterostructure device is based on a uniform and pinhole-free perovskite film constructed on top of a single-crystal germanium layer.The perovskite/germanium photodetector shows enhanced performance and a broad spectrum compared with the single-material-based device.The photon response properties are characterized in detail from the visible to near-infrared spectrum.At an optical fibre communication wavelength of 1550 nm,the heterojunction device exhibits the highest responsivity of 1.4 A/W.The performance is promoted because of an antireflection perovskite coating,the thickness of which is optimized to 150 nm at the telecommunication band.At a visible light wavelength of 680 nm,the device shows outstanding responsivity and detectivity of 228 A/W and 1.6×10^(10) Jones,respectively.These excellent properties arise from the photoconductive gain boost in the heterostructure device.The presented heterojunction photodetector provides a competitive approach for wide-spectrum photodetection from visible to optical communication areas.Based on the distinguished capacity of light detection and harvesting from the visible to near-infrared spectrum,the designed germanium/perovskite heterostructure configuration is believed to provide new building blocks for novel optoelectronic devices. | Wei Hu Hui Cong Wei Huang Yu Huang Lijuan Chen Anlian Pan Chunlai Xue | 2019 | Light(Science & Applications)2019，8，1： | 14 |
| 2 | Cesium lead halide perovskite triangular nanorods as high-gain medium and effective cavities for multiphoton- pumped lasing显示文摘基于铯铅卤化物 perovskite, nanostructures 在综合 photonics 为非线性的光学和实际频率 upconversion 设备正在答应的高效的抽 multiphoton 的激光。然而,如此的激光的表演高度依赖于材料和洞的质量,它使他们的制造挑战性。此处,我们表明经由蒸汽方法制作的三角形的 nanorods 能作为抽 multiphoton 的激光的获得媒介和有效的洞服务的那铯铅卤化物 perovskite。我们观察了在刺激的放射激光的模式蓝移动在增加的刺激的 fluence 依赖的放射激光系列驱动充满效果的乐队引起的移动,它与 Burstein 苔藓的动力学适合很好。而且,在 CsPbBr 3 nanorods 放射激光的有效 multiphoton 能在一个宽刺激波长范围(700-1,400 nm ) 被认识到。放射激光的 multiphoton 的动力学被解决时间的光致发光光谱学调查,它显示电子洞血浆负责抽 multiphoton 的放射激光。这个工作能在放射激光的频率 upconversion 为铯铅卤化物 perovskite nanostructures 导致新机会和应用设备并且光互连系统。 | Xiaoxia Wang Hong Zhou Shuangping Yuan Weihao Zheng Ying Jiang Xiujuan Zhuang Hongjun Liu Qinglin Zhang Xiaoli Zhu Xiao Wang Anlian Pan | 2017 | Nano Research2017，10，10： | 10 |
| 3 | Highly stable lead-free Cs3Bi2I9 perovskite nanoplates for photodetection applications显示文摘Lead halide perovskites have received tremendous attentions recently for their excellent properties such as high light absorption coefficient and long charge carrier diffusion length. However, the stability issues and the existence of toxic lead cations have largely limited their applications in optoelectronic area. Herein, we report the synthesis and investigation of highly stable and lead-free Cs3Bi2I9 perovskite nanoplates for visible light photodetection applications. The Cs3Bi2I9 nanoplates were synthesized through a facile solution-processed method, which is also applicable to various substrates. The achieved nanoplates present very good crystal quality and exhibit excellent long-term stability even exposed in moist air for several months. Photodetectors were constructed based on these high-quality perovskite nanoplates for the first time, and display a maximum photoresponsivity of 33.1 mA/W under the illumination of 450 nm laser, which is six times higher than the solution-synthesized CH3NH3PbI3 nanowire photodetectors. The specific detectivity of these devices can reach up to 10^10 Jones. Additionally, the devices exhibit fast rise and decay time of 10.2 and 37.2 ms, respectively, and highly stable photoswitching behavior with their photoresponse well retaining under alternating light and darkness. This work opens up a new opportunity for stable and low-toxic perovskite-based optoelectronic applications. | Zhaoyang Qi Xianwei Fu Tiefeng Yang Dong Li Peng Fan Honglai Li Feng Jiang Lihui Li Ziyu Luo Xiujuan Zhuang Anlian Pan | 2019 | Nano Research2019，12，8： | 7 |
| 4 | Single-Crystalline In Ga As Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors显示文摘In Ga As is an important bandgap-variable ternary semiconductor which has wide applications in electronics and optoelectronics. In this work, single-crystal In Ga As nanowires were synthesized by a chemical vapor deposition method.Photoluminescence measurements indicate the In Ga As nanowires have strong light emission in near-infrared region. For the first time, photodetector based on as-grown In Ga As nanowires was also constructed. It shows good light response over a broad spectral range in infrared region with responsivity of 6.5×10~3 AW^(-1) and external quantum efficiency of 5.04×10~5%. This photodetector may have potential applications in integrated optoelectronic devices and systems. | Huang Tan Chao Fan Liang Ma Xuehong Zhang Peng Fan Yankun Yang Wei Hu Hong Zhou Xiujuan Zhuang Xiaoli Zhu Anlian Pan | 2016 | Nano-Micro Letters2016，8，1： | 6 |
| 5 | Metasurface-enabled on-chip multiplexed diffractive neural networks in the visible显示文摘Replacing electrons with photons is a compelling route toward high-speed,massively parallel,and low-power artificial intelligence computing.Recently,diffractive networks composed of phase surfaces were trained to perform machine learning tasks through linear optical transformations.However,the existing architectures often comprise bulky components and,most critically,they cannot mimic the human brain for multitasking.Here,we demonstrate a multi-skilled diffractive neural network based on a metasurface device,which can perform on-chip multi-channel sensing and multitasking in the visible.The polarization multiplexing scheme of the subwavelength nanostructures is applied to construct a multi-channel classifier framework for simultaneous recognition of digital and fashionable items.The areal density of the artificial neurons can reach up to 6.25×10^(6)mm^(-2) multiplied by the number of channels.The metasurface is integrated with the mature complementary metal-oxide semiconductor imaging sensor,providing a chip-scale architecture to process information directly at physical layers for energy-efficient and ultra-fast image processing in machine vision,autonomous driving,and precision medicine. | Xuhao Luo Yueqiang Hu Xiangnian Ou Xin Li Jiajie Lai Na Liu Xinbin Cheng Anlian Pan Huigao Duan | 2022 | Light(Science & Applications)2022，11，7： | 4 |
| 6 | Interlayer exciton formation,relaxation,and transport in TMD van der Waals heterostructures显示文摘Van der Waals(vdW)heterostructures based on transition metal dichalcogenides(TMDs)generally possess a type-II band alignment that facilitates the formation of interlayer excitons between constituent monolayers.Manipulation of the interlayer excitons in TMD vdW heterostructures holds great promise for the development of excitonic integrated circuits that serve as the counterpart of electronic integrated circuits,which allows the photons and excitons to transform into each other and thus bridges optical communication and signal processing at the integrated circuit.As a consequence,numerous studies have been carried out to obtain deep insight into the physical properties of interlayer excitons,including revealing their ultrafast formation,long population recombination lifetimes,and intriguing spin-valley dynamics.These outstanding properties ensure interlayer excitons with good transport characteristics,and may pave the way for their potential applications in efficient excitonic devices based on TMD vdW heterostructures.At present,a systematic and comprehensive overview of interlayer exciton formation,relaxation,transport,and potential applications is still lacking.In this review,we give a comprehensive description and discussion of these frontier topics for interlayer excitons in TMD vdW heterostructures to provide valuable guidance for researchers in this field. | Ying Jiang Shula Chen Weihao Zheng Biyuan Zheng Anlian Pan | 2021 | Light(Science & Applications)2021，10，5： | 4 |
| 7 | Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS_(2)mixed-dimensional phototransistors显示文摘Mix-dimensional van der Waals heterostructures(vdWHs)have inspired worldwide interests and efforts in the field of ad-vanced electronics and optoelectronics.The fundamental understanding of interfacial charge transfer is of vital import-ance for guiding the design of functional optoelectronic applications.In this work,type-Ⅱ0D-2D CdSe/ZnS quantum dots/MoS_(2)vdWHs are designed to study the light-triggered interfacial charge behaviors and enhanced optoelectronic performances.From spectral measurements in both steady and transient states,the phenomena of suppressed photolu-minescence(PL)emissions,shifted Raman signals and changed PL lifetimes provide strong evidences of efficient charge transfer at the 0D-2D interface.A series of spectral evolutions of heterostructures with various QDs overlapping concentrations at different laser powers are analyzed in details,which clarifies the dynamic competition between exciton and trion during an efficient doping of 3.9×10^(13)cm^(−2).The enhanced photoresponses(1.57×10^(4)A·W^(-1))and detectivities(2.86×10^(11)Jones)in 0D/2D phototransistors further demonstrate that the light-induced charge transfer is still a feasible way to optimize the performance of optoelectronic devices.These results are expected to inspire the basic understand-ing of interfacial physics at 0D/2D interfaces,and shed the light on promoting the development of mixed-dimensional op-toelectronic devices in the near future. | Ziwei Li Wen Yang Ming Huang Xin Yang Chenguang Zhu Chenglin He Lihui Li Yajuan Wang Yunfei Xie Zhuoran Luo Delang Liang Jianhua Huang Xiaoli Zhu Xiujuan Zhuang Dong Li Anlian Pan | 2021 | Opto-Electronic Advances2021，4，9： | 4 |
| 8 | Vapor growth of WSe2/WS2 heterostructures with stacking dependent optical properties显示文摘Two-dimensional(2D)vertically stacked heterostructures based on layered transition-metal dichalcogenides(MDCs)have remarkablepote ntial in future applications due to their rich in terlayer related properties,such as in terlayer excitons,tun able interlayer band alignments.However,the controlled growth of TMDC bilayer heterostructures with preferred stacking structure remains challenging.Here,we report atwo-step van der Waals epitaxial vapor growth of WSe2/WS2 vertically stacked bilayer heterostructures with controllable commensurate crystallographic alignments(so called AA and AB stacki ng),by controlling the deposition temperature.Moire patter ns were obtai ned in bothAA and AB stacked WSe2/WS2 heterostructures.The stacking configuration of the vertical heterostructures was verified by the secondharmonic generation signals.Photoluminescenee and Raman spectroscopy studies further confirm that the heterostructures with differentstacking configuration have obviously different optical properties,which is ascribed to the distinct in terlayer coupling and resonance excitation between the distinguishing AA and AB stacked heterostructures.The controlled growth of AA and AB stacked heterostructures could provide an importa nee platform not only for fun dame ntal researches but also for functional electronic and optoelectronic deviceapplications. | Xueping Wu Xiao Wang Honglai Li Zhouxiaosong Zeng Biyuan Zheng Danliang Zhang Fang Li Xiaoli Zhu Ying Jiang Anlian Pan | 2019 | Nano Research2019，12，12： | 3 |
| 9 | Dual-channel type tunable field-effect transistors based on vertical bilayer WS2(1−x)Se2x/SnS2 heterostructures显示文摘Layered semiconductor heterostructures are essential elements in modern electronic and optoelectronic devices.Dynamically engineering the composition of these heterostructures may enable the flexible design of the properties of heterostructure-based electronics and optoelectronics as well as their optimization.Here,we report for the first time a two-step chemical vapor deposition approach for a series of WS2(1−x)Se2x/SnS2 vertical heterostructures with high-quality and large areas.The steady-state photoluminescence results exhibit an obvious composition-related quenching ratio,revealing a strong coherence between the band offset and the charge transfer efficiency at the junction interface.Based on the achieved heterostructures,dual-channel backgate field-effect transistors were successfully designed and exhibited typical composition-dependent transport behaviors,and pure n-type unipolar transistors to ambipolar transistors were realized in such systems.The direct vapor growth of these novel vertical WS2(1−x)Se2x/SnS2 heterostructures could offer an interesting system for probing new physical properties and provide a series of layered heterostructures for high-quality devices. | Biyuan Zheng Dong Li Chenguang Zhu Jianyue Lan Xingxia Sun Weihao Zheng Huawei Liu Xuehong Zhang Xiaoli Zhu Yexin Feng Tao Xu Litao Sun Gengzhao Xu Xiao Wang Chao Ma Anlian Pan | 2020 | InfoMat2020，2，4： | 3 |
| 10 | Plasmonically engineered light-matter interactions in Aunanoparticle/MoS_(2) heterostructures for artificial optoelectronic synapse显示文摘Optoelectronic synaptic elements are emerging functional devices for the vigorous development of advanced neuromorphic computing technology in the post-Moore era.However,optoelectronic devices based on transition metal dichalcogenides(TMDs)are limited to their poor mobilities and weak light-matter interactions,which still hardly exhibit superior device performances in the application of artificial synapses.Here,we demonstrate the successful fabrication of Au nanoparticle-coupled MoS_(2)heterostructures via chemical vapor deposition(CVD),where the light absorption of MoS_(2)is greatly enhanced and engineered by plasmonic effects.Hot electrons are excited from Au nanoparticles,and then injected into MoS_(2)semiconductors under the light illumination.The plasmonically-engineered photo-gating effect at the metal-semiconductor junction is demonstrated to create optoelectronic devices with excellent synaptic behaviors,especially in ultra-sensitive excitatory postsynaptic current(EPSC,9.6×10^(-3)nA@3.4 nW·cm^(-2)),ultralow energy consumption(34.7 pJ),long-state retention time(>1,000 s),and tunable synaptic plasticity transitions.The material system of Au-nanoparticles coupled TMDs presents unique advantages for building artificial synapses,which may lead the future development of neuromorphic electronics in optical information sensing and learning. | Zhuoran Luo Yunfei Xie Ziwei Li Yajuan Wang Lihui Li Ziyu Luo Chenguang Zhu Xin Yang Ming Huang Jianhua Huang Delang Liang Xiaoli Zhu Dong Li Anlian Pan | 2022 | Nano Research2022，15，4： | 3 |
| 11 | Controllable Vapor Growth of Large-Area Aligned CdS_xSe_(1-x) Nanowires for Visible Range Integratable Photodetectors显示文摘The controllable growth of large area band gap engineered-semiconductor nanowires(NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS_xSe_(1-x) nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdS_xSe_(1-x)NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdS_xSe_(1-x)NWs possess smooth surface and uniform diameter. The aligned CdS_xSe_(1-x)NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdS_xSe_(1-x)NWs. These devices exhibit high performance and fast response speed with photoresponsivity ~670 A W^(-1) and photoresponse time ~76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays,which exhibit promising applications in future optoelectronic integrated circuits. | Muhammad Shoaib Xiaoxia Wang Xuehong Zhang Qinglin Zhang Anlian Pan | 2018 | Nano-Micro Letters2018，10，4： | 3 |
| 12 | Synthesis and Diameter-dependent Thermal Conductivity of InAs Nanowires显示文摘In this work, we synthesized high-quality In As nanowires by a convenient chemical vapor deposition method,and developed a simple laser heating method to measure the thermal conductivity of a single In As nanowire in air. During the measurement, a focused laser was used to heat one end of a freely suspended nanowire, with its other end embedded into a carbon conductive adhesive. In order to obtain the thermal conductivity of In As nanowires, the heat loss in the heat transfer process was estimated, which includes the heat loss through air conduction, the heat convection, and the radiation loss. The absorption ratio of the laser power in the In As nanowire was calculated. The result shows that the thermal conductivity of In As nanowires monotonically increases from 6.4 W m-1K-1to 10.5 W m-1K-1with diameters increasing from 100 nm to 190 nm, which is ascribed to the enhanced phonon-boundary scattering. | Pinyun Ren Xiaoli Zhu Jinyun Han Jinyou Xu Liang Ma Honglai Li Xiujuan Zhuang Hong Zhou Qinglin Zhang Minggang Xia Anlian Pan | 2014 | Nano-Micro Letters2014，6，4： | 2 |
| 13 | Controlled fabrication, lasing behavior and excitonic recombination dynamics in single crystal CH3NH3PbBr3 perovskite cuboids显示文摘As a direct bandgap semiconductor, organic-inorganic lead halide perovskite (MAPbX3, MA = CH3NH3, X =Cl, Br, I) have been considered as promising materials for laser due to their excellent optoelectronic properties. The perovskite materials with ID and 2D shapes were widely prepared and studied for Fabry-Perot mode and whispering-gallery-mode (WGM) microcavities, but cuboid-shape is rarely reported. In this work, we successfully fabricated single crystal cuboid-shaped MAPbBr3 perovskite w让h different morphologies, named microcuboid-MAPbBr3 (M-MAPbBr3) and multi-step-MAPbBr3 (MSMAPbBr3), via solvothermal method. Furthermore, the as-prepared *crystals excitonic recombination lifetime under different pumping energy density was studied by time-resolved photoiuminescence (TRPL). Based on controllable morphology and remarkable lasing properties, these cuboid shaped single crystal perovskite could be a promising candidate for small laser, and other optoelectronic devices. | Fangtao Li Junfeng Lu Qinglin Zhang Dengfeng Peng Zheng Yang Qian Xu Caofeng Pan Anlian Pan Tianfeng Li Rongming Wang | 2019 | Science Bulletin2019，64，10： | 2 |
| 14 | Photoluminescence and surface photovoltage properties of Zn Se nanoribbons显示文摘Zn Se nanoribbons were synthesized with chemical vapor deposition route. The excitation power-dependent photoluminescence and surface photovoltage(SPV) techniques were used to study the optoelectronic properties of the as-grown Zn Se nanoribbons. Three deep defect(DD)-related emission bands, respectively, centered at 623 nm(DD1), 563 nm(DD2)and 525 nm(DD3), emerge orderly with increasing the excitation power, which is attributed to the saturation of the DD states from deeper to shallower level. The SPV spectrum and the corresponding phase spectrum show that DD1 mainly acts as recombination center, while DD2 and DD3 can act as both the recombination center and electron traps. The influence of the trapping electrons on the SPV response dynamic was studied with transient SPV. | Chao Fan Qinglin Zhang Xiaoli Zhu Xiujuan Zhuang Anlian Pan | 2015 | Science Bulletin2015，60，19： | 2 |
| 15 | High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures显示文摘Monolayer MoS2 is a direct band gap semiconductor with large exciton binding energy,which is a promising candidate for the application of ultrathin optoelectronic devices.However,the optoelectronic performance of monolayer M0S2 is seriously limited to its growth quality and carrier mobility.In this work,we report the direct vapor growth and the optoelectronic device of verticallystacked MoS2/MoSe2 heterostructure,and further discuss the mechanism of improved device performance.The optical and high-resolution atomic characterizations demonstrate that the heterostructure interface is of high-quality without atomic alloying.Electrical transport measurements indicate that the heterostructure transistor exhibits a high mobility of 28.5 cm^2/(V·s)and a high on/off ratio of 10^7.The optoelectronic characterizations prove that the heterostructure device presents an enhanced photoresponsivity of 36 A/W and a remarkable detectivity of 4.8×10^11 Jones,which benefited from the interface induced built-in electric field and carrier dependent Coulomb screening effect.This work demonstrates that the construction of two-dimensional(2D)semiconductor heterostructures plays a significant role in modifying the optoelectronic device properties of 2D materials. | Fang Li Boyi Xu Wen Yang Zhaoyang Qi Chao Ma Yajuan Wang Xuehong Zhang Zhuoran Luo Delang Liang Dong Li Ziwei Li Anlian Pan | 2020 | Nano Research2020，13，4： | 2 |
| 16 | Formation and Optical Properties of ZnO:ZnFe_(2)O_(4) Superlattice Microwires显示文摘Pure ZnO hexagonal microwires and Fe(Ⅲ)-doped ZnO microwires(MWs)with a novel rectangular cross section were synthesized in a confined chamber by a convenient one-step thermal evaporation method.An oriented attachment mechanism is consistent with a vapor-solid growth process.Photoluminescence(PL)and Raman spectroscopy of the Fe(Ⅲ)-doped ZnO MWs and in situ spectral mappings indicate a quasi-periodic distribution of Fe(Ⅲ)along a one-dimensional(1-D)superlattice ZnO:ZnFe_(2)O_(4) wire,while PL mapping shows the presence of optical multicavities and related multimodes.The PL spectra at room temperature show weak near-edge doublets(376 nm and 383 nm)and a broad band(450-650 nm)composed of strong discrete lines,due to a 1-D photonic crystal structure.Such a 1-D coupled optical cavity material may find many applications in future photonic and spintronic devices. | Yun Li Guozhang Dai Chunjiao Zhou Qinglin Zhang Qiang Wan Limin Fu Jianping Zhang Ruibin Liu Chuanbao Cao Anlian Pan Yunhong Zhang Bingsuo Zou | 2010 | Nano Research2010，3，5： | 2 |
| 17 | Ca^(2+) signals induced from calcium stores in pancreatic islet β cells显示文摘In single rat pancreatic βcells, using fura-2 microfluorometry to measure [Ca2+] response upon different stimuli, the ways of calcium regulation have been studied. When the extracellular calcium concentration was 2.5 mmol/L, either 60 mmol/L KCI, 20 mmol/L D-glucose or 0.1 mmol/L tolbutamide induced increase in [Ca2+]. Such increase in [Ca2+] was absent when the same stimuli were applied under zero extracellular calcium. These results indicate that the increase of [Ca2+] is induced by the activation of voltage-dependent calcium channels in p celis. The manifold forms of [Ca2+] change induced by glucose imply that the effects of glucose are complex. 5 mmol/L caffeine or 5 mmol/L MCh increase the [Ca2+], which is independent of the external calcium, suggesting that [Ca2+] can be regulated by Ca2+ release from not only the IP3-sensitive but also the ryanodine sensitive calcium stores in p celis. The latency of Ca responses for IP3 pathway (5 s) is faster than that for ryanodine pathway (30 s), it is | ZENG Xuhui, QU Anlian, LOU Xuelin, XU Jianhua, WANG Junjian, WU Hongxiu & ZHOU Zhuan1. Institute of Biochemistry and Biophysics, Huazhong University of Science and Technology, Wuhan 430074, China 2. Pharmacology, Huazhong University of Science and Technology, Wuhan 430074, China 3. School of Life Sciences, University of Science and Technology of China, Hefei 230027, China Correspondence should be addressed to Zhou Zhuan. | 2000 | Chinese Science Bulletin2000，45，1： | 2 |
| 18 | Continuous-wave lasing in halide perovskites显示文摘Continuous-wave(c.w.)lasing means that the laser is operated under continuous optical pumping,which is believed to be a key stepping stone on the path to an electrically pumped laser diode and to applications in high density integrated optoelectronic systems[1].Achieving continuous-wave lasing was thought to be challenging due to the intrinsic thermal damage | Xiaoxia Wang Xiao Wang Anlian Pan | 2018 | Science China Materials2018，61，9： | 2 |
| 19 | Changeable position of SPR peak of Ag nanoparticles embedded in mesoporous SiO2 glass by annealing treatment显示文摘 | Pan Anlian Yang Zhiping Zheng Huagui | 2003 | Applied Surface Science2003，205，14： | 1 |
| 20 | Excess Molar Volumes and Excess Logarithm Viscosities for Binary Mixtures of the Ionic Liquid 1-Butyl-3-methylimidazolium Hexaflurophosphate with Some Organic Compounds显示文摘 | Jianji Wang Anlian Zhu Yang Zhao Kelei Zhuo | 2005 | Journal of Solution Chemistry2005，，5： | 1 |
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